TPS1101D
Manufacturer:
Texas Instruments
Mfr.Part #:
TPS1101D
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 791 mW 15 V Continuous Drain Current (ID):2.3 A 11.25 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -15 V |
| Length | 4.9 mm |
| Width | 3.91 mm |
| Max Operating Temperature | 125 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 8 |
| Height | 1.75 mm |
| Packaging | Tube |
| Thickness | 1.58 mm |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -2.3 A |
| Output Current | 2.3 A |
| Output Voltage | -15 V |
| Lifecycle Status | Production (Last Updated: 1 day ago) |
| Max Power Dissipation | 791 mW |
| Power Dissipation | 791 mW |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 2.3 A |
| Rds On Max | 90 mΩ |
| Drain to Source Voltage (Vdss) | 15 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 6.5 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Fall Time | 5.5 ns |
| Rise Time | 5.5 ns |
| Gate Charge | 11.25 nC |
| Drain to Source Resistance | 90 mΩ |
| Nominal Vgs | -1.25 V |
| Gate to Source Voltage (Vgs) | 2 V |
| Drain to Source Breakdown Voltage (Vds) | 15 V |
| Schedule B | 8542390000 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Gate to Source Threshold Voltage | 1.5 V |
Stock: 139
Distributors
pcbx
pcbxUnit Price$2.52803
Ext.Price$2.52803
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.52803 | $2.52803 |
| 10 | $1.95266 | $19.52660 |
| 25 | $1.71050 | $42.76250 |
| 50 | $1.49838 | $74.91900 |
| 100 | $1.31256 | $131.25600 |
| 300 | $1.14978 | $344.93400 |
| 500 | $1.00719 | $503.59500 |
| 1000 | $0.88229 | $882.29000 |